FCA22N60N mosfet equivalent, n-channel mosfet.
* BVDSS > 650 V @ TJ = 150oC
* RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
* Ultra Low Gate Charge (Typ. Qg = 45 nC)
* Low Effective Output Capacitanc.
such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
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G D S
TO-3PN
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The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.
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